Publications

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Selected Publications (as of Jan. 2025)

[1] Z. Pei, H.-H. Liu, M. Mayahinia, M. B. Tahoori, F. Catthoor, Z. Tőkei, D. B. Abdi, J. Myers, and C. Pan, “Ultra-Scaled E-Tree-Based SRAM Design and Optimization With Interconnect Focus,” IEEE Transactions on Circuits and Systems I: Regular Papers, 2024. DOI: 10.1109/TCSI.2024.3438164

[2] Z. Pei, M. Mayahinia, H.-H. Liu, M. Tahoori, F. Catthoor, Z. Tokei, and C. Pan, “Technology/Memory Co-Design and Co-Optimization Using E-Tree Interconnect,” in Proceedings of the Great Lakes Symposium on VLSI 2023, 2023, pp. 159-162. DOI: 10.1145/3583781.3590311

[3] Z. Pei, M. Mayahinia, H.-H. Liu, M. Tahoori, S. M. Salahuddin, F. Catthoor, Z. Tokei, and C. Pan, “Emerging Interconnect Exploration for SRAM Application Using Nonconventional H-Tree and Center-Pin Access,” in 2023 24th International Symposium on Quality Electronic Design (ISQED), 2023, pp. 1-1. DOI: 10.1109/ISQED57927.2023.10129316

[4] Z. Pei, M. Mayahinia, H.-H. Liu, M. Tahoori, F. Catthoor, Z. Tokei, and C. Pan, “Graphene-Based Interconnect Exploration for Large SRAM Caches for Ultrascaled Technology Nodes,” IEEE Transactions on Electron Devices, vol. 70, pp. 230-238, 2022. DOI: 10.1109/TED.2022.3225512

[5] Z. Pei, F. Catthoor, Z. Tokei, and C. Pan, “Beyond-Cu Intermediate-Length Interconnect Exploration for SRAM Application,” IEEE Transactions on Nanotechnology, 2022. DOI: 10.1109/TNANO.2022.3157952

[6] Z. Pei, A. Dutta, L. Shang, S. Jung, and C. Pan, “Interconnect Technology/System Co-Optimization for Low-Power VLSI Applications Using Ballistic Materials,” IEEE Transactions on Electron Devices, vol. 68, pp. 3513-3519, 2021. DOI: 10.1109/TED.2021.3077210

[7] Z. Pei, L. Shang, S. Jung, and C. Pan, “Deep Pipeline Circuit for Low-Power Spintronic Devices,” IEEE Transactions on Electron Devices, vol. 68, pp. 1962-1968, 2021. DOI: 10.1109/TED.2021.3059601

[8] H.-H. Liu, C. Gilardi, S. M. Salahuddin, Z. Pei, P. Schuddinck, Y. Xiang, P. Weckx, G. Hellings, M. G. Bardon, and J. Ryckaert, “Future Design Direction for SRAM Data Array: Hierarchical Subarray With Active Interconnect,” IEEE Transactions on Circuits and Systems I: Regular Papers, 2024. DOI: 10.1109/TCSI.2024.3410518

[9] H.-H. Liu, P. Schuddinck, Z. Pei, L. Verschueren, H. Mertens, S. M. Salahuddin, G. Hiblot, Y. Xiang, B. T. Chan, and S. Subramanian, “CFET SRAM With Double-Sided Interconnect Design and DTCO Benchmark,” IEEE Transactions on Electron Devices, 2023. DOI: 10.1109/TED.2023.3305322

[10] M. Mayahinia, T. Marinelli, Z. Pei, H.-H. Liu, C. Pan, Z. Tokei, F. Catthoor, and M. B. Tahoori, “Dynamic Segmented Bus for Energy-Efficient Last-Level Cache in Advanced Interconnect-Dominant Nodes,” IEEE Embedded Systems Letters, vol. 16, pp. 321-324, 2024. DOI: 10.1109/LES.2024.3444711

[11] S. Lu, Z. Pei, L. Shang, S. Jung, Q. Liang, and C. Pan, “Graphene-Based FPGA Design and Optimization at the 7nm FinFET Technology Node,” in 2025 26th International Symposium on Quality Electronic Design (ISQED), 2025. (accepted).

[12] S. Lu, Z. Pei, L. Shang, S. Jung, and C. Pan, “A Technology/Circuit Co-design Framework for Emerging Reconfigurable Devices,” in 2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS), 2023, pp. 1123-1127. DOI: 10.1109/MWSCAS57524.2023.10406005

[13] G. Jalilvand, O. Ahmed, K. Bosworth, C. Fitzgerald, Z. Pei, and T. Jaing, “Application of a metallic cap layer to control Cu TSV extrusion,” in 2017 IEEE 67th Electronic Components and Technology Conference (ECTC), 2017, pp. 61-66. DOI: 10.1109/ECTC.2017.290

[14] Y. Yuan, M. Du, S. Zhang, and Z. Pei, “Effects of BiNbO4 on the microstructure and dielectric properties of BaTiO3-based ceramics,” Journal of Materials Science: Materials in Electronics, vol. 20, pp. 157-162, 2009. DOI: 10.1007/s10854-008-9674-5

Acknowledged as a key contributor to research for the below book: 

Circuit-Technology Co-Optimization of SRAM Design in Advanced CMOS Nodes

H.-H. Liu and F. Catthoor, “Circuit-Technology Co-Optimization of SRAM Design in Advanced CMOS Nodes,” ed: Springer, 2024. DOI: 10.1007/978-3-031-76109-6

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